RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1976 Volume 3, Number 3, Pages 576–581 (Mi qe11002)

This article is cited in 29 papers

Population inversion of Alxi in a laser plasma

È. Ya. Kononov, K. N. Koshelev, Yu. A. Levykin, Yu. V. Sidel'nikov, S. S. Churilov


Abstract: It was established experimentally that the population of the Alxi levels with n = 4 and 5 became inverted relative to the n = 3 level in a recombining laser plasma at distances of ~ 50–500 μ from the target surface. The relative populations of the levels were determined from the intensities of the lines in the series of the 2p–nd transitions in Alxi allowing for the self-absorption. The ratio of the populations of the 4d and 3d levels in the dense zone of the plasma with Ne1020 cm–3 was ~1.8, which corresponded to a population inversion of ΔN~1015 cm–3. In this zone the gain for the 3d–4f line of Alxi (λ ≈ 154Å) was estimated to be 0.1 cm–1. An investigation was made of the recombination of He-like Alxii ions and the electron temperature was determined as a function of the distance from the target surface, environment. Measurements indicate that the major impediment to the removal of this heat is the weak carrier-lattice interaction, (ii) Data are provided which allow an estimate to be made of the importance of current noise in the use of carbon composition resistance thermometers, (iii) For at least some carbon composition resistance thermometers, the temperature dependence of the resistance is given by the relation R = R0exp(AT–1/4) below ≈ 0.3 K.

UDC: 621.375.9:535

PACS: 52.50.Jm, 52.25.Ps

Received: 01.09.1975


 English version:
Soviet Journal of Quantum Electronics, 1976, 6:3, 308–311


© Steklov Math. Inst. of RAS, 2024