Abstract:
The main characteristics of InP and lnPxAs1–x injection laser diodes were determined at 4.2 and 77°K. The spectral, threshold, power, temporal, and spatial properties of the laser radiation were investigated in the wavelength range λ= 900–1100 nm. The best results at 77°K were obtained for InP lasers whose characteristics included a threshold current density of 1.7 kA/cm2, an output power of 16 W, and an efficiency of 26%.