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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1975 Volume 2, Number 4, Pages 814–819 (Mi qe11112)

This article is cited in 2 papers

Brief Communications

Characteristics of diffused InP and lnPxAs1–x laser diodes

I. Ismailov, A. Sadiev, R. Altynbaev, N. Shokhudzhaev


Abstract: The main characteristics of InP and lnPxAs1–x injection laser diodes were determined at 4.2 and 77°K. The spectral, threshold, power, temporal, and spatial properties of the laser radiation were investigated in the wavelength range λ= 900–1100 nm. The best results at 77°K were obtained for InP lasers whose characteristics included a threshold current density of 1.7 kA/cm2, an output power of 16 W, and an efficiency of 26%.

UDC: 621.378.35

PACS: 42.60.J

Received: 18.09.1974


 English version:
Soviet Journal of Quantum Electronics, 1975, 5:4, 451–454


© Steklov Math. Inst. of RAS, 2024