Laser deposition and optical investigation of thin GaxIn1–xAsySb1–y films of various compositions

A laser mixing method was used in preparation and investigation of GaInAsSb solid-solution films. The crystal lattice parameters and the compositions of the films were determined. The corresponding band gaps agreed well with the values obtained from optical investigations. The spectral dependence of the observed quantum size effect in a film of thickness d = 29 nm was in good agreement with an analytic expression derived by the authors.