High-efficiency GaInPAs/InP light-emitting diodes

An investigation was made of planar double InP–GaInPAs–InP heterostructures emitting radiation in the 1–1.3 μ range. The highest power of the output radiation was 15 mW when the current was 50 mA; this corresponded to a power conversion efficiency of 28%. This result indicated that the internal quantum efficiency of the electroluminescence generated in the quaternary solid solution GaInPAs was close to unity and that the InP substrate was sufficient to ensure an increase in the external efficiency by multiple reemission from the GaInPAs layer.