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Kvantovaya Elektronika, 1975 Volume 2, Number 8, Pages 1648–1653 (Mi qe11644)
Semiconductor laser utilizing intraband transitions between magnetic-film levels

A. G. Aleksanyan, R. G. Allakhverdyan, Al. G. Aleksanyan


Abstract: A thin-film semiconductor laser is analyzed theoretically. The gain is calculated for transitions between magnetic-film levels. The threshold conditions are deduced.

UDC: 621.378.35

PACS: 42.60.J

Received: 30.12.1974


 English version: Soviet Journal of Quantum Electronics, 1975, 5:8, 891–894

© Steklov Math. Inst. of RAS, 2024