Electron-beam-excited stimulated emission from InAs

An investigation was made of the cathodoluminescence of epitaxial films and bulk crystals of InAs with carrier densities in the range n = 5×10¹⁵–10¹⁸ cm^–3 and p = 6×10¹⁶–1.5x10¹⁸ cm^–3. Stimulated emission was obtained when epitaxial n-type InAs films with an electron density in the range (2–6) ×10¹⁶ cm^–3 were excited by a 50 keV electron beam at temperatures of 85-200°K. The dependences of the output power on the pumping rate and temperature were determined and the evolution of the emission spectra was studied. The maximum stimulated radiation power was 22 W. Failure to achieve stimulated emission in the range n> 6×10¹⁶ cm^–3 was attributed to the enhancement of the role of impact recombination with increasing electron density.