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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1976 Volume 3, Number 7, Pages 1609–1611 (Mi qe11721)

This article is cited in 2 papers

Brief Communications

Influence of excess carriers on the permittivity of GaAs at the frequency of radiative transitions in injection lasers

A. P. Bogatov, P. G. Eliseev, V. V. Mamutin


Abstract: A change in the resonance frequencies of the Fabry-Perot resonator of a GaAs laser diode with increasing pump current was detected and investigated. The value of δε/δN (e is the permittivity and N is the density of free electrons) was 2.6×10cm–20 cm3 when the current density was 15 kA/cm2, temperature was 300°K, and wavelength was about 901 nm.

UDC: 539.293:537.226.2+621.378.35

PACS: 42.60.Lh

Received: 26.01.1976


 English version:
Soviet Journal of Quantum Electronics, 1976, 6:7, 873–874


© Steklov Math. Inst. of RAS, 2025