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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1998 Volume 25, Number 4, Pages 355–357 (Mi qe1194)

This article is cited in 14 papers

Control of laser radiation parameters

Phase locking of eight wide-aperture semiconductor laser diodes in one-dimensional and two-dimensional configurations in an external Talbot cavity

V. V. Apollonova, S. I. Derzhavina, V. I. Kislova, A. A. Kazakovb, Yu. P. Koval'b, V. V. Kuz'minova, D. A. Mashkovskiia, A. M. Prokhorova

a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
b Open Joint-Stock Company M.F. Stel'makh Polyus Research Institute, Moscow

Abstract: Phase locking of the output radiation and mode selection were achieved experimentally in an external Talbot cavity, of length L = ZT/4 and containing one linear array of eight wide-aperture laser diodes each 120 μm wide. Such phase locking was also attained for two parallel linear arrays. The radiation from a single linear array was characterised by the contrast parameter V = 0.97 and by the angular width of the diffraction maxima amounting to 0.5 mrad at half-intensity corresponding to the diffraction limit for a linear array with a diode spacing period d = 200 μm. A cavity with a tilted mirror was investigated and the feasibility of increasing the radiation intensity in the central lobes was demonstrated. Phase locking was attained experimentally for two linear arrays separated by a distance of 1600 μm. The angular width of the maxima was 0.5 mrad in the p – n junction plane and 0.25 mrad in a plane perpendicular to the junction.

PACS: 42.55.Px, 42.60.Da, 42.60.Fc

Received: 24.11.1997


 English version:
Quantum Electronics, 1998, 28:4, 344–346

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