Yu. A. Akimov, E. B. Bendovskiĭ, A. A. Burov, E. A. Zagarinskiĭ, Yu. V. Klevkov, I. V. Kryukova, V. I. Leskovich, B. M. Stepanov, V. A. Chapnin, “Electron-beam-pumped InAs and PbxSn1–xSe semiconductor lasers”, Kvantovaya Elektronika, 1976, Volume 3, Number 10,Pages 2302

Brief Communications

Electron-beam-pumped InAs and Pb_xSn_1–xSe semiconductor lasers

Yu. A. Akimov, E. B. Bendovskiĭ, A. A. Burov, E. A. Zagarinskiĭ, Yu. V. Klevkov, I. V. Kryukova, V. I. Leskovich, B. M. Stepanov, V. A. Chapnin

Abstract: Sealed electron-beam-pumped InAs and Pb_xSn_1–xSe lasers were constructed. They emitted pulses of 10 W and 20 mW power at wavelengths of 3.04 and 10.6 μ, respectively. Each laser emitted pulses of 100 nsec duration at a repetition frequency of 100 Hz.

UDC: 621.378

PACS: 42.60.Jf

Received: 21.01.1976