RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1982 Volume 9, Number 4, Pages 711–717 (Mi qe12218)

This article is cited in 2 papers

X-ray spectra from glass microsphere laser targets

A. S. Ganeev, A. L. Zapysov, A. I. Zuev, I. M. Izrailev, V. B. Kryuchenkov, V. A. Lykov, V. A. Podgornov, V. G. Pokrovskiĭ, N. I. Simanova


Abstract: A study was made of the continuous and line x-ray spectra obtained in the course of spherical high-power pulse irradiation of glass microsphere targets using a multibeam neodymium laser apparatus. The continuous spectrum, measured in the quantum energy range 1–16 keV, was characterized by two values of the effective electron temperature: 0.6 keV (for the thermal electrons) and 2 keV (for the fast electrons). Two-dimensional images of the laser target, obtained using the x-ray lines due to transitions in H- and He-like silicon ions, were compared with the results of target image calculations made employing a one-dimensional gasdynamic program "Zarya". The possibility was investigated of determining the electron density and temperature profiles in the corona of SiO2 microsphere targets and a study was made of the influence of the transient nature of the plasma ionization state on the x-ray line emission from multiply charged Si ions.

UDC: 533.9:621.378.9

PACS: 52.50.Lp, 52.25.Ps, 42.60.He, 32.30.Rj

Received: 15.06.1981


 English version:
Soviet Journal of Quantum Electronics, 1982, 12:4, 439–443

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024