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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1982 Volume 9, Number 4, Pages 793–795 (Mi qe12235)

This article is cited in 1 paper

Brief Communications

Recombination laser utilizing a plasma jet of helium and xenon

I. I. Murav'ev, A. M. Shevnin, A. M. Yancharina, G. S. Evtushenko


Abstract: Stimulated emission was obtained at λ = 2.026 μ from Xe I in a pulsed helium-xenon plasma jet emerging from a discharge channel through a nozzle or a multinozzle grid at a velocity of ~105 cm/sec. A study was made of the spatial and temporal dependences of the output power as a function of the pressure and composition of the mixture, input energy, shape and duration of the current pulses. It was established that at sufficiently high helium pressures (pHe=100–300 Torr) the active levels were populated by a recombination mechanism.

UDC: 621.373.826.038.823

PACS: 42.55.Fn

Received: 20.07.1981


 English version:
Soviet Journal of Quantum Electronics, 1982, 12:4, 493–495

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© Steklov Math. Inst. of RAS, 2024