V. I. Kozlovsky, P. A. Trubenko, E. M. Dianov, Yu. V. Korostelin, Ya. K. Skasyrsky, P. V. Shapkin, “Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy”, Kvantovaya Elektronika, 1998, Volume 25, Number 4,Pages <nobr>305

Lasers

Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy

V. I. Kozlovsky^a, P. A. Trubenko^b, E. M. Dianov^b, Yu. V. Korostelin^a, Ya. K. Skasyrsky^a, P. V. Shapkin^a

^a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Fiber Optics Research Center of the Russian Academy of Sciences, Moscow

Abstract: The method of molecular beam epitaxy on a ZnSe substrate was used to grow a ZnCdSe/ZnSe structure with 115 quantum wells. This structure was made up into a cavity which included part of the substrate. Lasing was excited by longitudinal pumping with a scanning electron beam of E_e = 40 — 70 keV energy. At T = 80 K for E_e = 65 keV the threshold current density was 60 A cm^–2 and the output power was 0.15 W at the 465 nm wavelength. At T = 300 K the lasing (λ = 474 nm) occurred in the ZnSe substrate.

PACS: 42.55.Px, 78.66.Fd, 78.66.Hf, 85.30.St

Received: 14.01.1998