È. M. Belenov, P. G. Eliseev, A. N. Oraevsky, V. I. Romanenko, A. G. Sobolev, A. V. Uskov, “Analysis of optical amplification due to tunneling of electrons in a quantum-well semiconductor heterostructure”, Kvantovaya Elektronika, 1988, Volume 15, Number 8,Pages <nobr>1595

This article is cited in 1 paper

Nonlinear optical effects and devices

Analysis of optical amplification due to tunneling of electrons in a quantum-well semiconductor heterostructure

È. M. Belenov, P. G. Eliseev, A. N. Oraevsky, V. I. Romanenko, A. G. Sobolev, A. V. Uskov

Abstract: A theoretical investigation is made of the optical properties of quantum-well tunnel semiconductor structures. It is shown that resonant tunneling accompanied by the absorption and emission of electromagnetic radiation quanta makes it possible, in particular, to amplify light in such structures and the gain profile may be tunable by the application of a voltage.

PACS: 78.67.De, 68.65.Fg, 73.40.Gk

Received: 06.05.1987