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Kvantovaya Elektronika, 1988 Volume 15, Number 10, Pages 2012–2015 (Mi qe12475)

Solid-state and semiconductor lasers

High-frequency analog modulation of a semiconductor laser

N. N. Evtikhiev, A. V. Lukashin, G. T. Pak, V. V. Popovichev


Abstract: An investigation was made of high-frequency characteristics of GaAlAs injection lasers under continuous modulation conditions. The optical amplitude–frequency characteristics and the frequency dependence of the impedance made it possible to determine the equivalent circuits of two forms of lasers: a stripe laser and a laser with a channel in the substrate, which made it possible to optimize the input circuits of a laser light emitter. It was found that the channel-type laser had a highly linear modulation characteristic.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.Fc, 42.60.Jf

Received: 17.02.1988


 English version:
Soviet Journal of Quantum Electronics, 1988, 18:10, 1261–1263

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© Steklov Math. Inst. of RAS, 2024