A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov, “Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μm”, Kvantovaya Elektronika, 1988, Volume 15, Number 11,Pages <nobr>2171

This article is cited in 40 papers

Letters to the editor

Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μm

A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov

Abstract: Room-temperature cw lasing was achieved in InGaSbAs/GaAlSbAs heterostructure injection lasers emitting in the range 2.2–2.4 μm. A stripe geometry with a ridge waveguide was used. The threshold currents in the cw regime were 80–150 mA at T = 300 K.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 42.60.By, 42.60.Pk, 42.60.Jf, 42.81.Qb

Received: 06.06.1988