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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1988 Volume 15, Number 11, Pages 2196–2198 (Mi qe12609)

This article is cited in 2 papers

International conference on semiconductor injection lasers SELCO-87

Continuous-wave distributed-feedback InGaAsP (λ = 1.55 μm) injection heterolasers

V. I. Baryshev, E. G. Golikova, V. P. Duraev, V. I. Kuchinskii, K. Yu. Kizhaev, D. V. Kuksenkov, E. L. Portnoĭ, V. B. Smirnitskiĭ


Abstract: A study was made of stimulated emission from mesa-stripe distributed-feedback lasers in the form of double heterostructures with separate electron and optical confinement. A diffraction grating with a period Λ = 0.46 μm, formed on the surface of the upper waveguide layer by holographic lithography, ensured distributed feedback in the second order. The threshold current for cw operation at room temperature was 35–70 mA, the shift of the emission wavelength with temperature was ~ 0.08 nm/K, and the feedback coefficient deduced from the width of a "Bragg gap" was 110–150 cm– 1.

UDC: 621.373.826.033.825.4

PACS: 42.55.Px, 42.60.By, 42.60.Pk, 42.60.Jf, 42.60.Lh


 English version:
Soviet Journal of Quantum Electronics, 1988, 18:11, 1376–1378

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© Steklov Math. Inst. of RAS, 2024