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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1988 Volume 15, Number 11, Pages 2227–2230 (Mi qe12621)

International conference on semiconductor injection lasers SELCO-87

Electrical response of InGaAsP/InP heterolasers

Vu Van Luń, P. G. Eliseev, M. A. Man'ko, M. V. Tsotsorya


Abstract: An investigation was made of the change in the voltage across laser diodes emitting in the 1.3 μm range as a result of introduction of an external optical feedback in the form of an electrical response to interruption of the feedback ("optoelectronic" signal). Measurements were made on single-mode buried stripe heterostructures, using both unpackaged laboratory lasers and also serially manufactured ILPN-202 devices with radiation coupled out via a fiber waveguide. The optoelectronic signal reached 10–16 mV, but when a fiber waveguide was used, it was only 0.1–0.8 mV, depending on the quality of the contact between the laser and the fiber. Experiments showed that the ILPN-202 lasers could be used without any additional optics as sensors capable of detection of submicron displacements with a sensitivity in excess of 10 kV/m.

UDC: 621.383.826.038.825.4

PACS: 42.55.Px, 42.60.By, 42.60.Da, 42.81.Qb


 English version:
Soviet Journal of Quantum Electronics, 1988, 18:11, 1395–1397

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© Steklov Math. Inst. of RAS, 2024