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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1988 Volume 15, Number 11, Pages 2234–2238 (Mi qe12623)

International conference on semiconductor injection lasers SELCO-87

Behavior of gain-guided lasers generating high-power nanosecond pulses

G. Erbert


Abstract: Computer-controlled apparatus was used in an investigation of gain-guided narrow-stripe AlGaAs double heterostructure lasers. These lasers were excited with current pulses of 10 ns duration and amplitudes up to 3 A. The watt-ampere characteristics together with near- and far-field radiation patterns were considered using an analytic model of the lasers. The results showed that the values of the gain under a stripe contact or of the absorption outside this region varied with the output power.

UDC: 621.373.82Ú.038.825.4

PACS: 42.55.Px, 42.60.By, 42.60.Lh, 42.60.Da


 English version:
Soviet Journal of Quantum Electronics, 1988, 18:11, 1399–1402

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© Steklov Math. Inst. of RAS, 2024