A. Baerwolff, P. Ènders, A. Knauer, D. Linke, U. Zeimer, “Calculation of the yield of fault-free laser diodes from the characteristics of the (100)InP substrate material used in epitaxial double heterostructures”, Kvantovaya Elektronika, 1988, Volume 15, Number 11,Pages <nobr>2273

International conference on semiconductor injection lasers SELCO-87

Calculation of the yield of fault-free laser diodes from the characteristics of the (100)InP substrate material used in epitaxial double heterostructures

A. Baerwolff, P. Ènders, A. Knauer, D. Linke, U. Zeimer

Abstract: It is shown that the yield of fault-free laser diodes is related to the density and distribution of dislocations in the substrate. A method is described for visualization of etch pits and of their relationship to defects in the substrate.

UDC: 621.373.826.038.825.4

PACS: 42.55.Px, 73.40.Kp, 61.72.Lk