Abstract:
Characteristics of low-resistance Au–Cr–Au contacts with a quaternary solid solution, isoperiodic with GaInAsP, were determined as a function of the composition. These contacts were used in injection lasers emitting in the range of 1.3 μm. The smallest specific resistance (2 X 10– 5 Ω · cm2) was obtained for a contact with a GaInAs layer characterized by a hole density of ~ 1019 cm– 3.