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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1988 Volume 15, Number 11, Pages 2304–2308 (Mi qe12642)

International conference on semiconductor injection lasers SELCO-87

Recombination-induced motion of dislocations in III-V compounds

J. Schreiber, H. S. Leipner


Abstract: The methods of in situ cathodoluminescence and scanning electron microscopy were used in a study of stimulated dislocation glide. Dislocations generated by deliberate surface damage were found to be highly mobile when excited above a certain threshold. A study was made of the dependence of the glide velocity on the excitation rate and the first quantitative results on low-temperature dislocation motion are reported.

UDC: 621.373.826.038.825.4

PACS: 61.72.Hh, 68.47.Fg, 78.60.Hk, 68.37.Hk


 English version:
Soviet Journal of Quantum Electronics, 1988, 18:11, 1440–1443

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© Steklov Math. Inst. of RAS, 2024