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Kvantovaya Elektronika, 1977 Volume 4, Number 8, Pages 1815–1816 (Mi qe12729)

Brief Communications

Single-frequency GaAs injection laser

N. G. Basov, V. S. Kargapol'tsev, E. P. Malygin, V. K. Malyshev, V. I. Molochev, K. N. Narzullaev, V. V. Nikitin, A. S. Semenov, O. N. Talenskiĭ


Abstract: An experimental investigation was made of single-frequency GaAs injection lasers which were operated continuously at 77°K. The emission of a single longitudinal mode from a plane-parallel resonator was observed in a wide range of injection currents (up to a sevenfold excess over the threshold value) and the total output energy exceeded 50 mW.

UDC: 621.382.3

PACS: 42.55.Px

Received: 25.02.1977


 English version:
Soviet Journal of Quantum Electronics, 1977, 7:8, 1034


© Steklov Math. Inst. of RAS, 2024