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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1977 Volume 4, Number 9, Pages 2007–2009 (Mi qe12819)

This article is cited in 1 paper

Brief Communications

Integrated-optics functional elements based on epitaxial GaAlAs-GaAs heterostructures

Yu. A. Bykovskiĭ, Yu. P. Zakharov, A. V. Makovkin, V. K. Malyshev, V. I. Molochev, V. L. Smirnov, O. N. Talenskiĭ, A. V. Shmal'ko


Abstract: An investigation was made of active integrated-optics devices based on epitaxial GaAlAs-GaAs heterostructures sharing a common GaAs substrate. The results demonstrated a possibility of multifunctional use of GaAlAs heterostructure elements. An integrated-optics optron was constructed and the main parameters and characteristics were determined for a unit operating under various conditions.

UDC: 621.373.826:621.396

PACS: 42.82.+n, 73.40.Lq

Received: 01.02.1977


 English version:
Soviet Journal of Quantum Electronics, 1977, 7:9, 1144–1145


© Steklov Math. Inst. of RAS, 2024