A. L. Virro, P. G. Eliseev, P. A. Lyuk, Ya. K. Fridental, Yu. É. Khaller, “Injection lasers based on the AlGaAsSb system emitting at 1,6 μm”, Kvantovaya Elektronika, 1988, Volume 15, Number 11,Pages <nobr>2208

International conference on semiconductor injection lasers SELCO-87

Injection lasers based on the AlGaAsSb system emitting at 1,6 μm

A. L. Virro, P. G. Eliseev, P. A. Lyuk, Ya. K. Fridental, Yu. É. Khaller

Abstract: An experimental dependence of the threshold current density j_th on the thickness of the active region was used to find the reduced threshold current density for AlGaAsSb (λ=1.59μm, T=295K) lasers:this density was 8kA·cm^–2·μm^–1. The minimum threshold current was j_th=1.8 kA/cm². Wide-contact lasers exhibited cw operation down to 175 K.

UDC: 621.373.826:038.825.4

PACS: 42.55.Px, 42.60.By, 42.60.Pk, 42.70.Hj, 42.70.Nq