M. S. Brodin, N. V. Bondar', A. V. Kovalenko, A. Yu. Mekekechko, V. V. Tishchenko, “Optical characteristics of chalcogenide quantum-well structures grown by laser-induced vapor-phase epitaxy”, Kvantovaya Elektronika, 1993, Volume 20, Number 7,Pages <nobr>629

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Letters to the editor

Optical characteristics of chalcogenide quantum-well structures grown by laser-induced vapor-phase epitaxy

M. S. Brodin^a, N. V. Bondar'^a, A. V. Kovalenko^b, A. Yu. Mekekechko^b, V. V. Tishchenko^a

^a Institute of Physics, Academy of Sciences of Ukraine, Kiev
^b Dnepropetrovsk State University

Abstract: Laser-induced vapor-phase epitaxy can be used to synthesize quantum-well structures. Single ZnS – ZnSe – ZnS/GaAs(100) quantum-well structures and ZnS – ZnSe superlattices on GaAs(100) have been synthesized for the first time by this method. The reflection and photoluminescence spectra of these structures have been measured.

UDC: 539.23:535.37

PACS: 78.55.Et, 78.67.De, 81.15.-z, 68.55.-a, 78.67.Pt

Received: 12.05.1993