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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1987 Volume 14, Number 1, Pages 218–220 (Mi qe12920)

This article is cited in 7 papers

Brief Communications

Dye lasers pumped by radiation from high-power semiconductor lasers

O. V. Bogdankevich, M. M. Zverev, E. M. Krasavina, I. V. Kryukova, V. F. Pevtsov


Abstract: Dye lasers were pumped for the first time with radiation from high-power CdS and ZnO semiconductor lasers. The latter lasers were pumped by a beam of 350 keV electrons of 150 A/cm2 current density in the form of pulses of 25 nsec duration. Use was made of multicomponent semiconductor targets up to 50 mm in diameter. A special optical system was developed for focusing radiation in a dye cell. The efficiencies of conversion of the pump radiation into the dye laser radiation were 50% for the rhodamine 6G–CdS pair (when the output energy per pulse was 50 mJ) and 10% for the coumarin 47–ZnO pair.

UDC: 621.373.826.038.824

PACS: 42.55.Mv, 42.65.Re, 42.60.Lh, 42.60.Jf

Received: 05.05.1986


 English version:
Soviet Journal of Quantum Electronics, 1987, 17:1, 133–134

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© Steklov Math. Inst. of RAS, 2024