V. È. Kisel', A. E. Troshin, V. G. Shcherbitskii, N. V. Kuleshov, A. A. Pavlyuk, F. Brunner, R. Paschotta, F. Morier-Genoud, U. Keller, “Luminescent and lasing characteristics of heavily doped Yb3+:KY(WO4)2 crystals”, Kvantovaya Elektronika, 2006, Volume 36, Number 4,Pages 319

This article is cited in 11 papers

Lasers and amplifiers

Luminescent and lasing characteristics of heavily doped Yb³⁺:KY(WO₄)₂ crystals

V. È. Kisel'^a, A. E. Troshin^a, V. G. Shcherbitskii^a, N. V. Kuleshov^a, A. A. Pavlyuk^b, F. Brunner^c, R. Paschotta^c, F. Morier-Genoud^c, U. Keller^c

^a International Laser Center, Belarus State Technical University, Minsk
^b Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
^c ETH Zurich, Physics Department, Institute of Quantum Electronics, Switzerland

Abstract: The luminescence decay times are measured taking into account reabsorption for KY(WO₄)₂:Yb(KYW:Yb) crystals with atomic concentrations of active ions from 0.2% to 30%. The radiative lifetime of Yb³⁺ ions was measured to be 233 μs. The cw output power of 1.46 and 1.62 W was achieved with the slope efficiency 52% and 47% for Yb:KYW lasers with the atomic concentration of Yb³⁺ ions equal to 10% and 30%, respectively. Using a semiconductor mirror with a saturable absorber (SESAM) in the passive mode-locking regime, pulses of duration 194 and 180 fs were obtained at wavelengths of 1042 and 1039 nm for crystals with Yb³⁺ concentrations equal to 10% and 30%, respectively, the average output power being 0.63 and 0.75 W.

PACS: 32.50.+d, 42.55.Rz, 42.60.Lh, 42.70.Hj

Received: 10.11.2005
Revised: 12.01.2006