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Kvantovaya Elektronika, 2006 Volume 36, Number 10, Pages 918–924 (Mi qe13278)

This article is cited in 12 papers

Lasers

Simulations of light–current and spectral characteristics of InGaAlAs/InP semiconductor lasers

A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, V. I. Romantsevich, Yu. L. Ryaboshtan, R. V. Chernov

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: The light—current and spectral characteristics of semiconductor lasers are simulated by using models with and without inverse mass for radiative transitions with and without fulfilment of the wave-vector selection rules. The best agreement between the theory and experiment is obtained for a model without inverse mass with radiative transitions without fulfilment of the selection rules. The obtained results are discussed.

PACS: 42.55.Px, 42.60.Lh

Received: 28.03.2006
Revised: 24.05.2006


 English version:
Quantum Electronics, 2006, 36:10, 918–924

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