RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2007 Volume 37, Number 5, Pages 489–494 (Mi qe13307)

This article is cited in 4 papers

Laser devices and elements

Possibility of increasing the optical breakdown threshold in KDP crystals

V. I. Bredikhin, V. P. Ershov, V. N. Burenina, A. N. Mal'shakov, A. K. Potemkin

Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod

Abstract: The effect of various technological factors like the direction of crystal growth [(100) or (101)], acidity of the mother solution, growth rate, degree of filtration of the mother solution, purity of the starting raw material, specially introduced impurity (Pb), as well as after-growth thermal annealing, on the optical breakdown threshold of KDP crystals grown by the technique of rapid growth of profiled crystals is studied. It is shown that by using initial high-purity salts and fine filtration of solutions followed by after-growth annealing, it is possible to increase the optical breakdown threshold of profiled rapidly grown KDP crystals to values corresponding to the requirements of modern laser designs.

PACS: 42.70.Mp

Received: 16.06.2006
Revised: 13.12.2006


 English version:
Quantum Electronics, 2007, 37:5, 489–494

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024