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Kvantovaya Elektronika, 2007 Volume 37, Number 5, Pages 440–442 (Mi qe13454)

This article is cited in 3 papers

Lasers

A 913-nm diode-pumped quasi-three-level Nd3+:Gd0.7Y0.3VO4 laser

Yu. D. Zavartseva, A. I. Zagumennyia, Yu. L. Kalacheva, S. A. Kutovoia, V. A. Mikhaĭlova, V. V. Podreshetnikova, A. A. Sirotkina, I. A. Shcherbakova, R. Renner-Ernyb, W. Lüthyb, T. Feurerb

a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
b Institute of Applied Physics, University of Bern, Switzerland

Abstract: Lasing parameters of a mixed Nd3+:Gd0.7Y0.3VO4 vanadate crystal emitting at the 913-nm 4F3/24I9/2 laser transition are studied. The output power of up to 600 mW was obtained upon longitudinal diode pumping for the absolute and slope laser efficiencies of ~13% and ~17%, respectively.

PACS: 42.55.Rz, 42.60.Lh, 42.70.Hj

Received: 12.10.2006
Revised: 14.11.2006


 English version:
Quantum Electronics, 2007, 37:5, 440–442

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