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Kvantovaya Elektronika, 2007 Volume 37, Number 10, Pages 971–973 (Mi qe13627)

This article is cited in 4 papers

Special issue devoted to the 25 anniversary of the A.M. Prokhorov General Physics Institute

Efficiency of population of the 4I13/2 level of the Er3+ ion and the possibility of lasing at 1.5 μm in Yb, Er:YAG at high temperatures

B. I. Galagan, B. I. Denker, V. V. Osiko, S. E. Sverchkov

Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow

Abstract: It is shown that, as the temperature of an Yb, Er:YAG crystal is increased from room temperature to 400–600°C, the efficiency of energy accumulation on the 4I13/2 level of the Er3+ ion increases by several times upon optical pumping through Yb3+ ions. Under these conditions, up to 60% of erbium ions can be excited, which gives promise that lasing at a wavelength of 1.54 μm can be achieved in the Yb, Er:YAG crystal in the three-level scheme.

PACS: 42.55.Rz, 32.80.-t

Received: 15.05.2007


 English version:
Quantum Electronics, 2007, 37:10, 971–973

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