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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2008 Volume 38, Number 1, Pages 16–22 (Mi qe13633)

This article is cited in 2 papers

Lasers

Modes of a semiconductor rectangular microcavity

D. V. Batrak, A. P. Bogatov, A. E. Drakin, N. V. D'yachkov, D. R. Miftakhutdinov

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: The mode parameters of a rectangular cavity of a semiconductor laser emitting in the range from 850 to 880 nm are numerically calculated and analysed. Nearly quadratic microcavities with a side of length ~10 μm are considered. It is shown that, unlike a Fabry–Perot cavity, a rectangular cavity has a much more dense system of nonequidistant modes, which in principle cannot be interpreted as modes of an "efficient" Fabry–Perot cavity or a ring cavity. The maximum Q factor of modes in the cavities under study can exceed 105, which corresponds to the reduced intracavity loss ~3 cm-1. The radiation field of the cavity can be interpreted as the field of four coherent sources located at the cavity corners.

PACS: 42.55.Px, 42.55.Sa, 42.60.Da

Received: 22.05.2007


 English version:
Quantum Electronics, 2008, 38:1, 16–22

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© Steklov Math. Inst. of RAS, 2024