High-temperature properties of InGaN light-emitting diodes

Properties of InGaN/GaN/AlGaN light-emitting heterostructure diodes generating visible radiation were investigated at elevated temperatures (up to 450 K). The optical power fell relatively slowly above room temperature and the characteristic temperature constant was T₀* = 400 — 800 K. Auger recombination was not detected. The position of the spectral peak of Zn-doped diodes was practically independent of temperature. A red shift of the emission line of quantum-well diodes was observed with increase in temperature. This corresponded to a reduction in the band gap with a correction for the influence of the density-of- states tails.