Yu. V. Larionov, V. O. Sokolov, V. G. Plotnichenko, “Rearrangement of a phosphosilicate glass network induced by the 193-nm radiation”, Kvantovaya Elektronika, 2008, Volume 38, Number 10,Pages <nobr>945

This article is cited in 2 papers

Interaction of laser radiation with matter

Rearrangement of a phosphosilicate glass network induced by the 193-nm radiation

Yu. V. Larionov^a, V. O. Sokolov^b, V. G. Plotnichenko^b

^a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
^b Fiber Optics Research Center of the Russian Academy of Sciences, Moscow

Abstract: The IR absorption and Raman spectra of phosphosilicate glass (PSG) are measured during its exposure to radiation at a wavelength of 193 nm. The obtained data demonstrate the complicated rearrangement dynamics of the glass network around phosphor atoms and of the glass network as a whole. The experimental dependences are explained by the model of the PSG network based on the concepts of the theory of rigidity percolation.

PACS: 42.70.Ce, 42.70.Nq, 42.81.-i

Received: 27.11.2007
Revised: 19.03.2008