E. V. Andreeva, N. A. Volkov, Yu. O. Kostin, P. I. Lapin, A. A. Marmalyuk, D. R. Sabitov, S. D. Yakubovich, “Broadband near-IR double quantum-well heterostructure superluminescent diodes”, Kvantovaya Elektronika, 2008, Volume 38, Number 8,Pages <nobr>744

This article is cited in 1 paper

Lasers, active media

Broadband near-IR double quantum-well heterostructure superluminescent diodes

E. V. Andreeva^a, N. A. Volkov^a, Yu. O. Kostin^a, P. I. Lapin^a, A. A. Marmalyuk^b, D. R. Sabitov^b, S. D. Yakubovich^c

^a Superlum Diodes Ltd., Moscow
^b Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
^c Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)

Abstract: Superluminescent diodes (SLDs) based on double quantum-well (AlGa)As/GaAs heterostructures emitting between 800 and 900 nm are studied experimentally. These SLDs provide a high enough output power in the emission bandwidth more than 55 nm at much shorter active channel lengths than SLDs based on similar single quantum-well heterostructures. Despite the high injection current density, the service life of the SLDs exceeds 10000 hours.

PACS: 42.55.Px, 85.60.Jb, 42.60.Lh

Received: 03.12.2007