Quantum dot diode lasers for optical communication systems

Basic technological and physical aspects of injec-tion lasers based on arrays of self-organised InAs/InGaAs quantum dots on GaAs substrates for optical communication systems in the 1.2 — 1.3 μm spectral range are considered. The possibility of simultaneous lasing at a great nimber of longitudinal modes at a high power level and low noise is demonstrated. The use of these lasers in wavelength-division-multiplexing systems based on the spectral separation of the laser output spectrum is substantiated.