E. N. Donskoi, E. V. Zhdanova, A. N. Zalyalov, M. M. Zverev, S. V. Ivanov, D. V. Peregoudov, O. N. Petrushin, Yu. A. Savel'ev, I. V. Sedova, S. V. Sorokin, M. D. Tarasov, Yu. S. Shigaev, “Excitation density distribution in electron-beam-pumped ZnSe semiconductor lasers”, Kvantovaya Elektronika, 2008, Volume 38, Number 12,Pages <nobr>1097

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Excitation density distribution in electron-beam-pumped ZnSe semiconductor lasers

E. N. Donskoi^a, E. V. Zhdanova^b, A. N. Zalyalov^a, M. M. Zverev^b, S. V. Ivanov^c, D. V. Peregoudov^b, O. N. Petrushin^a, Yu. A. Savel'ev^a, I. V. Sedova^c, S. V. Sorokin^c, M. D. Tarasov^a, Yu. S. Shigaev^a

^a Federal State Unitary Enterprise «Russian Federal Nuclear Center — All-Russian Research Institute of Experimental Physics», Sarov, Nizhny Novgorod region
^b Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)
^c Ioffe Institute, St. Petersburg

Abstract: The spatial density distribution of the absorbed energy in ZnSe semiconductor lasers excited by electrons with energies from 2 keV to 1 MeV is calculated by the Monte-Carlo method. Approximate analytic expressions determining the absorbed energy of electrons in ZnSe are presented. The pump power threshold in a semiconductor quantum-well ZnSe structure is experimentally determined. The lasing threshold in such structures is estimated as a function of the electron energy.

PACS: 42.55.Px, 41.75.Fr

Received: 05.03.2008
Revised: 12.08.2008