Abstract:
The application of the method of modified laser photothermal radiometry for studying the photoinduced absorption in thin films is considered. The sensitivity of the method is estimated. The mechanism of induced near-IR absorption in titanium dioxide films is proposed and the nature of surface defects responsible for this process is explained. It is shown that kinetic equations describing monomolecular recombination are consistent with the experimental dependences for the thermal activation energy of defects equal to 0.17 ± 0.04 eV.