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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2009 Volume 39, Number 1, Pages 18–20 (Mi qe13933)

This article is cited in 3 papers

Lasers

High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AlGaAs heterostructures

E. I. Davydova, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, A. V. Petrovskii, A. V. Sukharev, M. B. Uspenskiy, V. A. Shishkin

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: Emission parameters of single-mode laser diodes based on InGaAs/GaAs/AlGaAs heterostructures doped with carbon and grown by using the metallorganic vapour phase epitaxy (MOVPE) technique are studied. The obtained results show that maintaining a certain doping profile ensuring optimisation of series resistance and internal optical losses during all fabrication stages of the active element of a diode laser, provides for enhancement of the laser efficiency. Based on laser heterostructures studied in this paper, highly efficient single-transverse-mode laser diodes emitting 300 mW at 980 nm have been manufactured.

PACS: 42.55.Px, 42.60.Jf, 78.66.-w

Received: 24.06.2008


 English version:
Quantum Electronics, 2009, 39:1, 18–20

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