M. V. Zverkov, V. P. Konyaev, V. V. Krichevskii, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, V. A. Simakov, A. V. Sukharev, “Double integrated nanostructures for pulsed 0.9-μm laser diodes”, Kvantovaya Elektronika, 2008, Volume 38, Number 11,Pages <nobr>989

This article is cited in 11 papers

Lasers

Double integrated nanostructures for pulsed 0.9-μm laser diodes

M. V. Zverkov, V. P. Konyaev, V. V. Krichevskii, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, V. A. Simakov, A. V. Sukharev

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: Double integrated laser InGaAs/GaAs/AlGaAs heterostructures grown by the method of metal-organic vapor phase epitaxy (MOVPE) in a single epitaxial process are studied. Typical slopes of the watt — ampere characteristic for a single laser diode were 1.08 — 1.15 W A^-1, while these slopes for the double integrated laser diode proved to be considerably higher (1.88 — 2.01 W A^-1). The manufactured double laser diodes emitting ~0.9 μm, 100-ns pulses at a pulse repetition rate of 10 kHz produce an output power of 50 W at pump current of 30 A.

PACS: 42.55.Px, 42.60.By, 42.60.Jf, 42.60.Lh

Received: 11.07.2008