V. V. Bezotosnyi, V. Yu. Bondarev, O. N. Krokhin, G. T. Mikayelyan, V. A. Oleshchenko, V. F. Pevtsov, Yu. M. Popov, E. A. Cheshev, “Laser diodes emitting up to 25 W at 808 nm”, Kvantovaya Elektronika, 2009, Volume 39, Number 3,Pages <nobr>241

This article is cited in 15 papers

Lasers

Laser diodes emitting up to 25 W at 808 nm

V. V. Bezotosnyi^a, V. Yu. Bondarev^a, O. N. Krokhin^a, G. T. Mikayelyan^b, V. A. Oleshchenko^a, V. F. Pevtsov^a, Yu. M. Popov^a, E. A. Cheshev^a

^a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Inject Ltd., Saratov

Abstract: Crystals of high-power laser diodes are directly mounted on copper heat-removing elements. The maximum output power of 25 W is obtained many times in a 808-nm cw laser with the 150-μm-wide strip contact at 20 °C. After training tests at the output power of 6 W for 200 hours, the yield of acceptable samples was 80 %. No changes in the output parameters were observed after tests for 70 hours at the output power of 8.5 W. Tests are being continued.

PACS: 42.55.Px, 42.60.Jf, 42.60.Lh

Received: 15.10.2008
Revised: 12.12.2008