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Kvantovaya Elektronika, 1999 Volume 26, Number 1, Pages 28–32 (Mi qe1406)

This article is cited in 6 papers

Lasers

Efficiency and intensity distribution in a semiconductor laser operating in the ‘leaky’ regime

A. P. Bogatova, A. E. Drakina, V. I. Shveikinb

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: The differential efficiency is calculated for a semi-conductor laser having an optical waveguide with a wave leaking out into the substrate. The differential efficiency is shown to be close to the limit if the optical quality of the substrate (with losses ~1 cm–1 or less) is sufficiently high and the remaining laser parameters have typical and attainable values. Optimisation of the parameters of such a laser makes it possible to increase the output power severalfold compared with the power of a laser generating a conventional waveguide mode without radiation leakage.

PACS: 42.55.Px, 42.60.Da

Received: 28.09.1998


 English version:
Quantum Electronics, 1999, 29:1, 28–32

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