V. È. Kisel', A. S. Yasukevich, N. V. Kondratyuk, N. V. Kuleshov, “Diode-pumped passively <i>]Q</i>-switched high-repetition-rate Yb microchip laser”, Kvantovaya Elektronika, 2009, Volume 39, Number 11,Pages <nobr>1018

This article is cited in 12 papers

Lasers

Diode-pumped passively ]Q-switched high-repetition-rate Yb microchip laser

V. È. Kisel', A. S. Yasukevich, N. V. Kondratyuk, N. V. Kuleshov

Research Institute of Optical Materials and Technologies, Belarus National Technical University

Abstract: The system of balance equations is modified for quasi-three-level passively Q-switched lasers with a slow saturable absorber. Optimal parameters of a Yb³⁺:YAG microchip laser with a passive Cr⁴⁺:YAG Q switch are calculated at a pulse repetition rate of ~100 kHz. The single-mode operation of the Yb:YAG — Cr:YAG laser with a pulse repetition rate above 100 kHz, the average output power 0.45 W and peak power 1.5 kW is experimentally demonstrated. In the multimode lasing regime, pulses with a peak power of 4.2 kW are obtained at an average output power of 0.8 W and a pulse repetition rate of 10 kHz.

PACS: 42.55.Rz, 42.55.Sa, 42.55.Xi, 42.60.Da, 42.60.Gd

Received: 12.05.2009