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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2009 Volume 39, Number 11, Pages 1028–1032 (Mi qe14159)

This article is cited in 6 papers

Lasers

Simulation of a longitudinally electron-beam-pumped nanoheterostructure semiconductor laser

D. V. Vysotskiia, N. N. Ëlkina, A. P. Napartovicha, V. I. Kozlovskyb, B. M. Lavrushinb

a State Research Center of Russian Federation "Troitsk Institute for Innovation and Fusion Research"
b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: A three-dimensional numerical model of a vertical-cavity surface-emitting laser (VCSEL) containing a resonance grating of quantum wells (QWs) is developed. The Helmholtz equation for a field and the diffusion equation for a medium, in which an electron beam is the source of charge carriers, aresolved self-consistently, which allowed us to find the longitudinal and radial profiles of the generated field, its frequency, and the threshold pump current. The characteristics of the higher-order modes are calculated against the background of the frozen medium formed by the generated mode. The stability limit of the single-mode regime and the type of a mode at which lasing begins to develop with increasing pump power are found from calculations of the gain balance and losses for higher-order modes. An iteration algorithm is developed for calculating the parameters of a VCSEL with many QWs, the calculation time increasing linearly with the number of QWs. The profiles of the resonator modes and their frequency spectrum are calculated for a cylindrically symmetric VCSEL. The stability limits of single-mode lasing are determined. The results are compared qualitatively with experiments.

PACS: 42.55.Px, 42.60.Da, 41.75.Fr

Received: 19.05.2009
Revised: 08.07.2009


 English version:
Quantum Electronics, 2009, 39:11, 1028–1032

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