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Kvantovaya Elektronika, 1999 Volume 26, Number 2, Pages 103–108 (Mi qe1425)

This article is cited in 3 papers

Lasers

Passive mode locking in a multisegment laser diode with an external cavity

E. V. Andreevaa, N. I. Koroteevb, S. A. Magnitskiya, E. Salikc, D. S. Starodubovd, J. Feinbergc, M. V. Shramenkoe, S. D. Yakuboviche

a International Laser Center of Moscow State University
b Lomonosov Moscow State University, Faculty of Physics
c University of Southern California, Los Angeles, USA
d D-Star Technology Inc., California, USA
e Moscow State Technical University of Radioengineering, Electronics and Automation

Abstract: The structure and operating conditions of multisegment laser (GaAl)As diodes with passive locking of the modes of an external cavity (bulk and fibre) were optimised. Regular trains of optical single pulses of picosecond duration were generated in a spectral range 850 — 860 nm. The peak power of these pulses was several watts and the repetition rate was near 1 GHz. Under certain conditions these output pulses were linearly chirped, i.e. they were suitable for subpicosecond time compression. Laboratory prototypes were made of miniature light-emitting modules with these characteristics.

PACS: 42.55.Px, 42.60.Fc

Received: 22.10.1998


 English version:
Quantum Electronics, 1999, 29:2, 103–108

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