E. I. Davydova, V. P. Konyaev, M. A. Ladugin, E. I. Lebedeva, A. A. Marmalyuk, A. A. Padalitsa, S. V. Petrov, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, I. V. Yarotskaya, “808-nm laser diode bars based on epitaxially stacked double heterostructures”, Kvantovaya Elektronika, 2010, Volume 40, Number 8,Pages <nobr>682

This article is cited in 5 papers

Lasers

808-nm laser diode bars based on epitaxially stacked double heterostructures

E. I. Davydova, V. P. Konyaev, M. A. Ladugin, E. I. Lebedeva, A. A. Marmalyuk, A. A. Padalitsa, S. V. Petrov, S. M. Sapozhnikov, V. A. Simakov, M. B. Uspenskiy, I. V. Yarotskaya

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: We have fabricated and investigated linear arrays of single laser diodes (LDs) and epitaxially stacked double LDs based on AlGaAs/GaAs heterostructures emitting in the 808-nm range. The power — current characteristic of the double-LD bars has a slope of 2.18 W A^-1, which is almost twice that of the single-LD bars (1.16 W A^-1). The voltage drop across the former bars is also larger. At a pump current of 60 A, the output power of 5-mm-long arrays of LDs based on epitaxially stacked double heterostructures is 100 W under quasi-cw pumping, which is a factor of 1.8 above that of the single-LD bars under identical conditions.

PACS: 42.55.Px, 42.60.By, 42.60.Jf, 42.60.Lh

Received: 12.05.2010