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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1994 Volume 21, Number 7, Pages 633–639 (Mi qe144)

This article is cited in 32 papers

Lasers and masers

Waveguiding properties of heterolasers based on InGaAs/GaAs strained quantum-well structures and characteristics of their gain spectra

E. V. Arzhanov, A. P. Bogatov, V. P. Konyaev, O. M. Nikitina, V. I. Shveikin

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: An experimental investigation revealed anomalies of the watt–ampere characteristics and modulation of the gain spectra, as well as certain features of the far-field pattern of the radiation emitted by heterolasers based on InGaAs/GaAs strained quantum-well structures. A theoretical analysis showed that the radiative characteristics of such lasers are governed by their waveguiding properties and that these properties depend on the thickness and composition of the emitter layers, and are the results of 'leakage' of the radiation field out of the waveguide.

PACS: 42.55.Px, 42.60.Jf, 42.79.Gn

Received: 22.11.1993


 English version:
Quantum Electronics, 1994, 24:7, 581–587

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