V. Ya. Aleshkin, T. S. Babushkina, A. A. Biryukov, A. A. Dubinov, B. N. Zvonkov, M. N. Kolesnikov, V. I. Nekorkin, “Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern”, Kvantovaya Elektronika, 2010, Volume 40, Number 10,Pages <nobr>855

This article is cited in 6 papers

Lasers

Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern

V. Ya. Aleshkin^a, T. S. Babushkina^b, A. A. Biryukov^b, A. A. Dubinov^a, B. N. Zvonkov^b, M. N. Kolesnikov^b, V. I. Nekorkin^b

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Scientific-Research Physicotechnical Institute N. I. Lobachevsky State University of Nizhnii Novgorod

Abstract: A leaky-wave semiconductor laser diode has been developed based on the InGaAs/GaAs/InGaP heterostructure. This design made it possible to obtain a high radiation output in a narrow angular range (about 1°—2°) with an energy of 170 μJ in a laser with a cavity length of 0.8 mm and a stripe contact width of 360 μm, pumped by a single current pulse with an amplitude of 88 A and width of 5 μs.

PACS: 42.55.Px, 42.60.Da, 42.60.Jf

Received: 20.07.2010