V. V. Kabanov, E. V. Lebiadok, A. A. Romanenko, A. G. Ryabtsev, G. I. Ryabtsev, M. A. Shchemelev, S. K. Mekhta, “Amplified luminescence and output characteristics of high-power InGaAs/AlGaAs laser diode arrays”, Kvantovaya Elektronika, 2011, Volume 41, Number 2,Pages <nobr>95

This article is cited in 6 papers

Lasers

Amplified luminescence and output characteristics of high-power InGaAs/AlGaAs laser diode arrays

V. V. Kabanov^a, E. V. Lebiadok^a, A. A. Romanenko^a, A. G. Ryabtsev^b, G. I. Ryabtsev^a, M. A. Shchemelev^b, S. K. Mekhta^c

^a B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
^b Belarusian State University, Minsk
^c Solid State Physics Laboratory, India

Abstract: The influence of the amplified luminescence (AL) and spreading of nonequilibrium charge carriers on the threshold, dynamic, and power characteristics of high-power InGaAs/AlGaAs laser diode arrays (LDAs) is studied. It is found that, depending on the near-field fill factor, the contribution of AL-induced recombination to the lasing threshold of LDAs may reach 11%. It is shown that the losses of the LDA pump energy, associated with the AL, increase with the injection current growth above its threshold value because of the increase in the intensity of radiation, propagating normally to the LDA cavity axis.

PACS: 42.55.Px, 42.60.Lh, 78.45.+h

Received: 11.10.2010
Revised: 06.12.2010