Yu. D. Zavartsev, A. I. Zagumennyi, Yu. L. Kalachev, S. A. Kutovoi, V. A. Mikhaĭlov, V. V. Podreshetnikov, I. A. Shcherbakov, “Diode-pumped Tm:Sc2SiO5 laser (λ = 1.98 μm)”, Kvantovaya Elektronika, 2011, Volume 41, Number 5,Pages 420

This article is cited in 11 papers

Lasers

Diode-pumped Tm:Sc₂SiO₅ laser (λ = 1.98 μm)

Yu. D. Zavartsev, A. I. Zagumennyi, Yu. L. Kalachev, S. A. Kutovoi, V. A. Mikhaĭlov, V. V. Podreshetnikov, I. A. Shcherbakov

Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow

Abstract: Lasing at a wavelength of 1.98 μm is obtained for the first time in a diode-pumped (λ = 792 μm) active element made of a Tm³⁺:Sc₂SiO₅ crystal grown by the Czochralski method. The laser slope efficiency reached 18.7% at the output power up to 520 mW.

PACS: 42.55.Rz, 42.70.Hj, 42.60.Lh

Received: 01.11.2010
Revised: 09.02.2011